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During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.